IRE Transactions on Electron Devices · 1958 · 11 citations · 0 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportP-n JunctionsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesCarrier GenerationHole TransportSemiconductor Junctions
When the surface of a semiconductor is bombarded by an electron beam, hole-electron pairs are generated in the semiconductor. By choosing a suitable geometry for a p-ŋŋŋ junction with respect to the bombarded surface, a substantial number of the hole-electron pairs are collected by the junction and a current is thus induced.