Applied Physics Letters · 1999 · 276 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsCarrier TransportSemiconductor InterfacesSemiconductor Thin FilmsSolar Cell MaterialsSolar CellsThin-film MaterialsCadmium SelenideChemical DiffusionDiffusion BehaviorEnergy Dispersive X-ray SpectroscopyEnergy-dispersive X-ray SpectroscopyInterface DiffusionSolar Cell CharacterizationThin-film Solar Cells
The diffusion behavior at the Cu(In, Ga)Se2 (CIGS)/CdS interface of high efficiency CIGS thin film solar cells has been investigated using energy dispersive x-ray spectroscopy (EDX) and transmission electron microscopy. CdS layers were deposited on CIGS thin films using the chemical bath deposition (CBD) process. EDX analysis revealed that Cd was present in the CIGS layer approximately 100 Å from the interface boundary. In contrast to the diffusion of Cd, the Cu concentration decreased near the surface of the CIGS film, suggesting substitution of Cd for Cu atoms. These results are direct evidence of Cd diffusion into CIGS thin films during the CBD process.
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