A new transparent conducting oxide in the Ga2O3–In2O3–SnO2 system

Abstract

A new transparent conducting oxide (TCO), which can be expressed as Ga3−xIn5+xSn2O16; 0.2⩽x⩽1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3–In2O3–SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm−1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.