Time resolved fluorescence of the <i>A</i> 2Σ+ state of GeF

Abstract

The radiative lifetime and quenching rates for the A 2Σ+ state of GeF have been measured in the flame of GeH4+F2 by pulsed laser induced fluorescence. In addition, the radiative lifetime of the ν′=0 level of the A 2Σ+ state of SiF has been measured in the flame of SiH4+F2. Quenching rates for He, N2, and SF6 on GeF A 2Σ and He on SiF A 2Σ have also been determined. The average zero pressure lifetime of ν′=0, 1, and 2 levels of A 2Σ GeF is 990±100 nsec. The zero pressure lifetime of the A 2Σ state of SiF is 205±20 nsec. The average quenching rates for He, N2, and SF6 on GeF A 2Σ are 1.6×105, 6.4×106, and 8×105 sec−1 Torr−1, respectively. The quenching rate of He on A 2Σ (ν′=0) SiF is 6.5×104 sec−1 Torr−1.