Emissivity of B-implanted and annealed silicon

Abstract

Isothermal electron beam heating has been used to anneal ion-implanted silicon samples and the changes in the spectral ε(λ,T) and total hemispherical εTot(T) emissivities caused by damage annealing and dopant activation have been monitored in situ. Free carrier absorption effects have been observed after annealing of a B-implanted sample, resulting in an increase of ε(λ,T) in the semitransparent region and an increase of εTot(T). An increase of normalized emissivity at 800 °C was also observed.