Applied Physics Letters · 2012 · 21 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceOptical MaterialsPhotonicsSemiconductor DevicesEtching ProcessesIntegrated PhotonicsOptical WaveguidesPhotonic Integrated CircuitsSilicon PhotonicsWaveguidesCmos-compatible PhotonicsCouplersIntegrated WaveguidesOptical CouplersSilicon WaveguidesSilicon-on-insulator TechnologyStrip WaveguidesWaveguide Loss
We demonstrate an ultra-thin silicon waveguide for wavelengths around 1.55 μm, and mode converters designed for transitions to and from standard 500 nm × 220 nm strip waveguides. The devices were fabricated in a CMOS-compatible process requiring two photolithography and etch steps. The ultra-thin waveguides exhibited losses of 2.01 ± 0.231 dB/cm, exhibited bend radii as small as 30 μm with losses of 0.05 ± 0.005 dB per bend, and exhibited coupling losses of 0.66 ± 0.014 dB to standard strip waveguides.
17
Electrooptical effects in silicon
Richard Soref, B. R. Bennett · IEEE Journal of Quantum Electronics · 1987 · 2.6K citations
Micrometre-scale silicon electro-optic modulator
Qianfan Xu, Bradley S. Schmidt, Sameer Pradhan et al. · Nature · 2005 · 2.4K citations
Bahram Jalali, Sasan Fathpour · Journal of Lightwave Technology · 2006 · 1.4K citations
Engineering, Computer Engineering, Electrical Engineering +15
Nanotaper for compact mode conversion
Vilson R. Almeida, Roberto R. Panepucci, Michal Lipson · Optics Letters · 2003 · 860 citations