Publication | Closed Access
Molecular beam epitaxial growth of GaN thin film on Si substrate with InN as interlayer
13
Citations
21
References
2006
Year
Si SubstrateElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceMolecular Beam EpitaxyEpitaxial GrowthGan Thin Film
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