One-dimensional electron transport in InAs/(Al_xGa_1-x)Sb SQWs

Abstract

The authors report 4.2 K magnetoresistance measurements of InAs quantum wires based on AlGaSb/InAs/AlGaSb heterostructures grown by molecular beam epitaxy (MBE). The widths of the channel have been defined by electron-beam lithography and wet chemical etching. In the low magnetic field region, the Landau plots deviated from the linear relations indicating the lateral confinement. In the high magnetic field region, pronounced spin-splitting of Landau levels was observed in quantum wires compared with two-dimensional electron gas.