Orientation dependence of electron–irradiation damage in zinc oxide

T. Yoshiie, H. Iwanaga, N. Shibata, Masaki Ichihara, Shoji Takeuchi

Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1979 · 33 citations · 2 references

Concepts

Abstract

Abstract The threshold voltage for zinc displacement in ZnO by electron irradiation lias been determined by high–voltage electron microscopy as a function of incident orientation from the [2110] to both the [0001] and [000T] directions. It is found that the threshold voltage is a minimum (∼700kV) in the [2110] direction and a maximum (∼1100kV) in the [0001] and [000T] directions without showing polarity effects. The result is interpreted in terms of the crystal structure of ZnO.

References

2