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Electronic structure of antiferromagnetic chromium (100) thin film
23
Citations
13
References
1981
Year
EngineeringMagnetic ResonanceSpintronic MaterialElectronic StructureMagnetoresistanceMagnetismBulk Interlayer DistanceQuantum MaterialsMagnetic Topological InsulatorSurface Spin PolarisationMagnetic Thin FilmsMaterials SciencePhysicsAntiferromagnetismMagnetic MaterialQuantum MagnetismSpintronicsNatural SciencesSurface ScienceCondensed Matter PhysicsApplied PhysicsThin Films
The electronic structure of antiferromagnetic chromium (100) thin films with bulk interlayer distance and surface relaxation is calculated by the spin-polarised self-consistent-charge discrete variational X alpha method. The electronic bandstructures, the local density of states, atomic charges and spin polarisations of each of the atoms, including the spatial distributions and their dependence on the surface relaxation, are presented. The magnetic moments on the surface, second and third layers are 2.57, 0.96 and 0.64 mu B respectively. The surface spin polarisation decreases with surface contraction and increases with surface extension.
| Year | Citations | |
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1953 | 275 | |
1959 | 160 | |
1981 | 122 | |
1978 | 115 | |
1980 | 106 | |
1980 | 101 | |
1965 | 90 | |
1973 | 88 | |
1980 | 74 | |
1961 | 48 |
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