Inelastic Electron Tunneling Spectroscopy of Langmuir-Blodgett Monolayers on Silicon Substrate

Abstract

An inelastic electron tunneling spectroscopy (IETS) technique is employed to investigate Langmuir-Blodgett monolayers deposited on silicon substrates. Thermally formed SiO 2 layers are used as a tunneling barrier to obtain reliable and sensitive signals. IETS data, which are compared to IR and Raman data, show the stability and chemical reactions of organic monolayers at the metal or SiO 2 interface.