Publication | Closed Access

Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC

Materials EngineeringMaterials ScienceElectrical EngineeringAluminium NitrideEngineeringWide-bandgap SemiconductorApplied PhysicsAluminum Gallium NitrideGan Power DeviceDefect DensityGan Films