Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_0.7Sr_0.3TiO₃ Capacitors Integrated in a Silicon Device

Abstract

Temperature-dependent current-voltage characteristics of fully processed Ba 0.7 Sr 0.3 TiO 3 thin film capacitors integrated in a charge-coupled device delay-line processor as bypass capacitors were studied. The thin film capacitors with a film thickness of 185 nm were formed by metal-organic decomposition processing. The leakage current measured after completion of the integration process was 1 to 2 orders of magnitude higher than that measured after capacitor patterning. The leakage current at low voltages (<1 V, 50 kV/cm) indicated ohmic conduction within a measured temperature range of 300–423 K. At high voltages (>10 V, 500 kV/cm), the Schottky mechanism plays a dominant role in leakage current, while the Frenkel-Poole emission begins to contribute to the leakage current as the temperature is elevated.