Terahertz emission of population-inverted hot-holes in single-crystalline silicon

Abstract

We report THz emission of hot-holes in p-type silicon doped with a boron acceptor concentration of NA=1.5×1015 cm−3. We apply crossed electric (E) and magnetic (B) fields to the crystal cooled to liquid helium temperature. Optical gain is found for field ratios E/B in the range 0.5–1 kV cm−1 T−1. We calculate optical gain spectra in Si and identify possible laser transitions.