Applied Physics Letters · 1976 · 81 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor LasersWide Band Gap SemiconductorsDouble Heterostructure DevicesDouble HeterostructuresHeterostructure DevicesHeterostructure LasersHeterostructure MaterialsMolecular Beam EpitaxySemiconductor Laser FabricationTemperature Dependence Of Laser Performance
The continuous (cw) operation at temperatures as high as 100 °C of stripe-geometry GaAs-AlxGa1−xAs double-heterostructure lasers fabricated by molecular-beam epitaxial (MBE) techniques has been achieved. Improved MBE laser performance was the result of the extensive efforts to eliminate hydrocarbon and water vapor from the growth apparatus. For 12-μm-wide stripe-geometry lasers with 380-μm-long cavities, the cw threshold currents varied between 163 and 297 mA at room temperature.
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JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
I. Hayashi, M. B. Panish, P. W. Foy et al. · Applied Physics Letters · 1970 · 591 citations