2005 European Microwave Conference · 2005 · 10 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor MaterialsFerroelectric MaterialsHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave MaterialsMicrowave Semiconductor DevicesSemiconductor Thin FilmsCoplanar WaveguidesDifferential Phase ShiftMicrowave SubstratesPhase ShiftersSemiconductor Materials For Microwave DevicesSiliconSilicon Microwave Integrated CircuitsSubstrate Integrated Circuits
In this paper, a BST coplanar phase shifter with differential phase shift of 98/spl deg/ at 50 V and FoM of 46.7/spl deg//dB has been realized. The potential feasibility of integrating BST films into Si substrate as microwave phase shifter and/or coplanar waveguide tunable devices with TiO/sub 2/ thin film buffer layer has been successfully demonstrated. TiO/sub 2/ as buffer layer has been successfully grown onto Si substrate by ALD (atomic layer deposition).
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