Physical Review Letters · 1994 · 129 citations · 16 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials PhysicsOptical MaterialsThin FilmsFerroelectric MaterialsOptical Properties Of SolidsOptical Thin FilmsPerovskite MaterialsThin Film Electrical PropertiesThin Film Optical PropertiesHalide PerovskitesInterface StabilityInterfacial ElectrostaticsOxide Interface StabilityOxide PerovskitesPerovskite FerroelectricsPerovskite OxidesThin Film Ferroelectrics
An understanding of heteroepitaxy between perovskite and alkaline earth oxides is developed in terms of ion size and interfacial electrostatics. Interfacial energy minimization at the first atomic layers is the basis for a commensurate, unit-cell stability. This unit-cell stability presents the opportunity to study reduced dimensional or two-dimensional phenomena in thin-film ferroelectrics and is the basis for growth of high crystal quality, \ensuremath{\mu}m-thick films for optical device applications.
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J. R. Johnson · Nuclear Science and Engineering · 1965 · 2.2K citations
Natural Sciences, Materials Engineering, Materials Science +11
High critical currents in strained epitaxial YBa2Cu3O7−δ on Si
D. K. Fork, D. B. Fenner, R. Barton et al. · Applied Physics Letters · 1990 · 255 citations