Oxide Interface Stability is the thermodynamic and kinetic resilience of the boundary between a metal or semiconductor and its native oxide layer, characterized by resistance to interfacial defect formation, phase segregation, or chemical degradation under operational environmental conditions.
303
Publications
14.3K
Citations
1.3K
Authors
418
Institutions
Publications per year
2017–2026
70
Parents
Publications
303
Dynamic interplay between metal nanoparticles and oxide support under redox conditions
Hannes Frey, Arik Beck, Xing Huang et al. · Science · 2022 · 369 citations · Full text
J. Chakhalian, Andrew J. Millis, James M. Rondinelli · Nature Materials · 2012 · 300 citations
Natural Sciences, Materials Engineering, Materials Science +12
1–5 of 303
Authors
1.3K
- YW
5
h-index
- JP
4
h-index
- AG
4
h-index
- SH
4
h-index
- GL
3
h-index
1–5 of 1.3K
Institutions
418
Centre National de la Recherche Scientifique
Paris, France
12 h-index
43 publications
2.4K citations
Chinese Academy of Sciences
Beijing, China
11 h-index
31 publications
1.7K citations
North Carolina State University
Raleigh, United States
7 h-index
12 publications
564 citations
University of California, Berkeley
Berkeley, United States
6 h-index
17 publications
806 citations
The University of Tokyo
Tokyo, Japan
6 h-index
21 publications
1.3K citations
Pohang University of Science and Technology
Pohang, South Korea
5 h-index
22 publications
867 citations
Los Alamos National Laboratory
Los Alamos, United States
5 h-index
14 publications
473 citations
National University of Singapore
Singapore, Singapore
5 h-index
19 publications
660 citations
1–8 of 418
Venues
- Applied Physics Letters
20 publications · 1.1K citations
17
h-index
- Applied Surface Science
16 publications · 435 citations
13
h-index
- Surface Science
11 publications · 353 citations
11
h-index
- Journal of The Electrochemical Society
JES · 8 publications · 144 citations
9
h-index
- Journal of Applied Physics
8 publications · 265 citations
8
h-index
1–5