Electron spin dynamics in GaAsN and InGaAsN structures

Abstract

Abstract We report on optical orientation experiments in undoped GaAsN epilayers and InGaAsN quantum wells (QW), showing that a strong electron spin polarisation can persist at room temperature. We demonstrate that the spin dynamics in these dilute nitride structures is governed by a spin‐dependent recombination process of free conduction electrons on deep paramagnetic centres. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)