Trap generation and occupation in stressed gate oxides under spatially variable oxide electric field

Abstract

The spatial variation of the oxide field in metal-oxide-silicon devices due to charge trapping under electron injection stress is included in a self-consistent trapping model. The model predicts the spatial distribution of the stress-generated trapping sites and their occupation level under different conditions of applied voltages and total injected charge. The calculated results agree quite well with the experimental results of prolonged charge injection, as expressed in shifts of the flatband voltage.