Electrical insulation properties of sputter‐deposited SiO₂, Si₃N₄ and Al₂O₃ films at room temperature and 400 °C

Abstract

Abstract In this paper the breakdown field strength and resistivity of sputter‐deposited Al 2 O 3 , SiO 2 and Si 3 N 4 layers are investigated in the temperature range between room temperature and 400 °C. All the investigated layers showed excellent insulation properties, even at elevated sample temperature. One example of industrial application is the deposition of electrical insulation layers onto the membranes of pressure sensors using cluster type sputter equipment