The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy - Concepedia

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The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy

33

Citations

17

References

2004

Year

Emmanouil Dimakis, K. Tsagaraki, A. Adikimenakis, E. Iliopoulos, A. Georgakilas

Superlattices and Microstructures

Materials ScienceWide-bandgap SemiconductorIn-face Inn-on-ganNucleation TemperatureEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceMolecular Beam Epitaxy

References

	Year	Citations

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