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CMOS wideband amplifiers using multiple inductive-series peaking technique
162
Citations
10
References
2005
Year
EngineeringHigh-frequency DeviceMixed-signal Integrated CircuitCmos TechnologyMultiple Inductive-seriesBeyond CmosMicroelectronicsCmos Wideband AmplifiersOptoelectronicsRf SubsystemDeteriorated Parasitic CapacitanceElectromagnetic Compatibility
This work presents the technique of multiple inductive-series peaking to mitigate the deteriorated parasitic capacitance in CMOS technology. Employing multiple inductive-series peaking technique, a 10-Gb/s optical transimpedance amplifier (TIA) has been implemented in a 0.18-/spl mu/m CMOS process. The 10-Gb/s optical CMOS TIA, which accommodates a PD capacitor of 250 fF, achieves the gain of 61 dB/spl Omega/ and 3-dB frequency of 7.2 GHz. The noise measurement shows the average noise current of 8.2 pA//spl radic/Hz with power consumption of 70 mW.
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