Physical review. B, Solid state · 1977 · 29 citations · 25 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSurface ScienceCarrier TransportCharge Carrier TransportSemiconductor PhysicsSemiconductor SurfacesSurface ChargeSurface PhysicsCarrier Transport In SemiconductorsCarrier Transport MechanismsCharge Carrier DensityShubnikov-de Haas OscillationsSpace-charge LayersSurface Electronic StructureSurface LayersSurface States
The cyclotron resonance (CR) of holes in space-charge layers on the (100), (110), and (111) surfaces of Si has been investigated at low temperatures (10 K) and in high magnetic fields (18 T). The dependences of the cyclotron resonance mass ${n}_{c}^{*}$, as obtained from a fit to the CR line shape, on surface carrier density are found to be in good agreement with the data by von Klitzing et al., extracted from Shubnikov-de Haas (SdH) experiments and the predictions of Bangert et al. and Ohkawa and Uemura, but do not support the SdH results of Lakhani et al. and the calculations of Falicov and Garcia.
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