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Existence of a phonon bottleneck for excitons in quantum dots
162
Citations
22
References
2001
Year
SemiconductorsQuantum ScienceCategoryquantum ElectronicsCharge ExcitationsEngineeringPhotoluminescencePhysicsQuantum DeviceOptoelectronic MaterialsApplied PhysicsCondensed Matter PhysicsQuantum MaterialsPhonon BottleneckPhononTruncated QdQuantum DevicesTruncated ShapeSemiconductor Nanostructures
A phonon bottleneck is manifested for correlated electron/hole (exciton) states in self-organized ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}/\mathrm{GaAs}$ quantum dots (QD's) with a flat, truncated shape. Suppressed relaxation and hot luminescence from excited states in the low-density regime are demonstrated. The long low-temperature relaxation time of $\ensuremath{\sim}7.7 \mathrm{ns},$ being $\ensuremath{\sim}15$ times the radiative lifetime, is attributed to a quenched polar exciton-LO-phonon coupling in truncated QD's based on eight-band $\mathbf{k}\ensuremath{\cdot}\mathbf{p}$ model calculations.
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