Optical Anisotropy of Vacancy-Ordered Ga₂Se₃ Grown by Molecular Beam Epitaxy

Abstract

Optical anisotropy of the vacancy-ordered Ga 2 Se 3 grown on (100)GaP has been investigated. The electron-diffraction studies revealed that the vacancy-ordered superstructure was predominantly formed in the [011] direction when the film was grown with a VI/III ratio of 150. From the transmission spectra for light polarized toward [011] and [011̄], it is found that a difference in the absorption coefficients of the two polarized lights is more than 10 4 cm -1 at a wavelength of around 525 nm, and that the vacancy-ordered Ga 2 Se 3 behaves like a polarizer in the selected wavelength range.