Degradation of Al<i>x</i>Ga1−<i>x</i>As heterojunction electroluminescent devices

Abstract

Experimental results are presented correlating the operating life of (AlGa)As heterojunction diodes with recombination region doping and Al concentration. For a given doping level, the operating life is shown to increase with the addition of Al. The relationship between spontaneous emission degradation and lasing properties has also been studied.