Journal of Physics C Solid State Physics · 1988 · 15 citations · 13 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSolid State PhysicsAmorphous Electronic MaterialsAmorphous SemiconductorsOxide SemiconductorsThermal Properties Of MaterialsThermal Properties Of SemiconductorsThermoelectric MaterialsAmorphous Oxide SemiconductorsHall ConductivityHall EffectHall Effect MeasurementsInorganic SemiconductorsSeebeck CoefficientThermoelectric PropertiesThermoelectric Transport
Conductivity, thermoelectric power and Hall effect measurements are reported for V2O5 gels with relative concentrations of V4+ of 0.005 and 0.11. Both the Seebeck and the Hall coefficient are negative. This is an exception to the rule that the sign anomaly effect should be observed for amorphous semiconductors, i.e. that these coefficients should have opposite signs. An irreversible change of conductivity and thermoelectric power with temperature is observed, which is mainly attributed to an irreversible increase of V4+ concentration. The results of thermoelectric power measurements are consistent with a simplified version of the Heikes and Ure formulae for transition-metal oxide glasses.
13
Polarons in crystalline and non-crystalline materials
I. G. Austin, N. F. Mott · Advances In Physics · 1969 · 3.1K citations
Polaronic Impurity Hopping Conduction
J. Schnakenberg · physica status solidi (b) · 1968 · 271 citations
Layered structure of vanadium pentoxide gels
P. Aldebert, N. Baffier, N. Gharbi et al. · Materials Research Bulletin · 1981 · 256 citations
E. P. DENTON, H. M. Rawson, J. E. STANWORTH · Nature · 1954 · 177 citations
Jean‐Jacques Legendre, Jacques Livage · Journal of Colloid and Interface Science · 1983 · 177 citations