Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition - Concepedia

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Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition

21

Citations

9

References

2007

Year

Mathieu Halbwax, Charles Renard, D. Cammilleri, Vy Yam, Frédéric Fossard, D. Bouchier, Yingyao Zheng, E. Rzepka

Journal of Crystal Growth

Materials ScienceEngineeringSurface ScienceApplied PhysicsThin Sio2 LayerVacuum DeviceMolecular Beam EpitaxySilicon On InsulatorEpitaxial GrowthChemical Vapor Deposition

References

	Year	Citations

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