Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

Abstract

The spatial distribution of chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure has been studied by photoemission electron microscopy. It has been found that the change in resistance that occurs with the application of the first voltage is caused by the formation of a reduction path through the CuO channel between the Pt electrodes. A detailed analysis suggests that Joule-heat-assisted reduction induced by the current flowing through the device may play an important role in the formation of the conductive reduction path.