Low leakage Schottky rectifiers fabricated on homoepitaxial GaN

Abstract

The development of a vertical GaN Schottky rectifier on freestanding bulk GaN substrate by employing homoepitaxial growth technique is reported. The n−∕n+ Schottky diode structure was grown on conductive GaN substrate by metal-organic chemical vapor deposition. The dislocation density of the homoepitaxial layer determined by cathodoluminescence mapping technique is ∼6×106cm−2 with surface roughness less than 1nm. The fabricated Schottky rectifiers with dielectric overlap edge termination show a low reverse leakage current of <3×10−8A at −100V, which can be explained by the low dislocation density in the epilayer and high Schottky barrier height (1.37eV) of the Pt∕GaN metal-semiconductor contact. Due to the reduced series resistance, the bulk GaN Schottky rectifiers also exhibit a low turn-on voltage of ∼1.3V and an on-resistance of ∼5.3mΩcm2.