Physical Review B · 2005 · 33 citations · 27 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsElectronic Band StructureQuantum ConfinementQuantum WellsSemiconductor DefectsSemiconductor HeterostructuresSemiconductor PhysicsAtomic Energy Level StructureBarriersDielectric ConstantDisorderHeterostructuresQuantum Confinement EffectsQuantum Well Band StructureQuantum Well Heterostructures
Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow $12\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ wide quantum wells deposited between ${\mathrm{Pb}}_{0.92}{\mathrm{Eu}}_{0.08}\mathrm{Te}$ barriers. Because the quantum confinement imposed by the barriers is much stronger than the lateral one, the one-dimensional electron energy-level structure is very similar to that usually met in constrictions of $\mathrm{Al}\mathrm{Ga}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ heterostructures. However, in contrast to any other system studied thus far, we observe precise conductance quantization in $2{e}^{2}∕h$ units, despite of a significant amount of charged defects in the vicinity of the constriction. We show that such extraordinary results is a consequence of the paraelectric properties of PbTe, namely, the suppression of long-range tails of the Coulomb potentials due to the huge dielectric constant.
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