Applied Physics Letters · 2001 · 13 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesChemical Vapor DepositionLaser DiodesPhotonic Integrated CircuitsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersHeterostructure LasersIntegrated LasersIntegrated Semiconductor LasersMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionQuantum Well Laser DiodesQuantum Well LasersSemiconductor Laser Diodes
We have developed a monolithic two-wavelength laser diode, which emits 650 and 780 nm wavelengths. This device, which has a separated-confinement-heterostructure multi-quantum-well active region and a gain-guiding tapered-stripe structure, is fabricated using only two steps of metal organic chemical vapor deposition. The operating currents at 5 mW are 57.0 and 61.5 mA for the 650 and 780 nm elements, respectively. The relative intensity noise of the 650 and 780 nm elements was below −130 dB/Hz up to 70 °C without high-frequency superposition circuits.
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InGaAsP/InP dual wavelength lasers
Shiro Sakai, T. Aoki, M. Umeno · Electronics Letters · 1982 · 22 citations
Dual wavelength InGaAsP/Inp TJS lasers
Shigeki Sakai, T. Aoki, M. Umeno · Electronics Letters · 1982 · 12 citations