Applied Physics Letters · 2004 · 38 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsInterface EngineeringNanoelectronicsSemiconductor InterfacesSemiconductor NanomaterialsSemiconductor PhysicsSemiconductor SurfacesIn-situ MeasurementsQuantum WiresSize ControlSubstrate Temperature EffectsSurface GrowthSurface Reconstruction Control
The size and emission wavelength of self-assembled InAs∕InP(001) quantum wires (QWrs) is affected by the P∕As exchange process. In this work, we demonstrate by in situ stress measurements that P∕As exchange at the InAs∕InP interface depends on the surface reconstruction of the InAs starting surface and its immediate evolution when the arsenic cell is closed. Accordingly, the amount of InP grown on InAs by P∕As exchange increases with substrate temperature in a steplike way. These results allow us to engineer the size of the QWr for emission at 1.3 and 1.55μm at room temperature by selecting the range of substrate temperatures in which the InP cap layer is grown.
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Wavelength tuning of InAs quantum dots grown on (311)B InP
S. Fréchengues, Nicolas Bertru, V. Drouot et al. · Applied Physics Letters · 1999 · 84 citations