2010 · 68 citations · 6 references
EngineeringComputer EngineeringLow-power DesignMagnetic MaterialsMicroelectronicsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyMemory DevicesMemory Subsystem DesignMemristive MaterialsSpintronicsCmos ScalingMagnetoresistive Random-access MemoryMemory Circuit DesignNon-volatile Cmos MemoryNon-volatile Memory DesignNonvolatile Memory MaterialsResistive Random-access MemorySpin-transfer Torque Memory
We present a negative-resistance read scheme and write scheme for spin-torque-transfer (STT) MRAM. A negative resistance shunting an STT-MRAM cell performs a non-destructive read operation, and saves power during write compared with the conventional scheme. Measurements show an 8 ns non-destructive read-access time and an average write power savings of 10.5% for a 16 kb STTMRAM fabricated in 0.13 μm CMOS using a CoFeB/MgO/CoFeB MTJ.
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Ryusuke Nebashi, Noboru Sakimura, H. Honjo et al. · 2009 · 33 citations
Engineering, Computer Engineering, Electrical Engineering +13