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Si(100) surfaces: Atomic and electronic structures
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1979
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Materials ScienceSemiconductorsIonic DimersSurface CharacterizationEngineeringPhysicsCrystalline DefectsSurface Atomic CoordinatesSurface AnalysisSurface ScienceApplied PhysicsCondensed Matter PhysicsSiliceneAtomic PhysicsElectronic StructuresSurface Atomic GeometriesSilicon On InsulatorSurface Reconstruction
The surface atomic geometries of 2×1 and 4×2 reconstructed Si(100) are determined through energy-minimization calculations. Many possible structural models were tested. The results show the most favorable geometries for both the 2×1 and 4×2 surfaces to be that of asymmetric, partially ionic dimers. The surface atomic coordinates and electronic structures are discussed.