Charge-carrier mobilities in Cd0.8Zn0.2Te single crystals used as nuclear radiation detectors

Abstract

Charge-carrier mobilities have been measured for the first time in Cd0.8Zn0.2Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (λ=532 nm). The electron mobility displayed a T−1.1 dependence on the absolute temperature T in the range 200–320 K, with a room-temperature mobility of 1350 cm2/V s. The hole mobility displayed a T−2.0 dependence in the same temperature range, with a room-temperature mobility of 120 cm2/V s. Cd0.8Zn0.2Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.