Publication | Closed Access
Nanometer resolution in luminescence microscopy of III-V heterostructures
150
Citations
11
References
1990
Year
PhotoluminescenceEngineeringTunneling MicroscopyPhysicsMicroscopyNanoelectronicsMicroscope ExperimentNanometer ResolutionApplied PhysicsScanning Probe MicroscopyLuminescence PropertyElectron MicroscopeMultilayer HeterostructuresMicroelectronicsOptoelectronicsCategoryiii-v SemiconductorInterface Region
In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.
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