Etching characteristics of Si and SiO2 with a low energy argon/hydrogen d.c. plasma source - Concepedia

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Etching characteristics of Si and SiO2 with a low energy argon/hydrogen d.c. plasma source

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Citations

2

References

1997

Year

A Strass, W. Hänsch, Peter Bieringer, Alexandra Neubecker, F Kaesen, Andreas Fischer, I. Eisele

Surface and Coatings Technology

Electrical EngineeringEngineeringSurface ScienceApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorPlasma EtchingPlasma Processing

References

	Year	Citations

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