Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy

Abstract

We have demonstrated the first CBE growth of InP using bisphosphinoethane as a group V source. Mirrorlike surface morphology and excellent reflection high-energy electron diffraction patterns were observed. Room temperature and 77 K Hall mobilities for a 2.0 μm thick InP epitaxial layer were 4200 and 22 000 cm2/V s, with carrier densities of 5.7×1015 and 4.0×1015 cm−3, respectively. Although a high n-type impurity concentration is observed at the epitaxial layer-substrate interface, the epitaxial layer background impurity concentration is low enough for device fabrication. The full width at half maximum linewidth of the dominant donor bound exciton is 0.84 meV.