Formation of Cubic Boron Nitride Films by Boron Evaporation and Nitrogen Ion Beam Bombardment

Abstract

The resistivity and structure of films deposited on tantalum and rocksalt substrates by the electron beam evaporation of boron and the simultaneous bombardment of 30 keV N 2 + ion beam were studied. From observation by transmission electron microscope, it was found that cubic boron nitride was produced in the case where the prepared composition rate of boron to nitrogen was 2.5.