Van der Waals Epitaxial Growth of C₆₀ Film on a Cleaved Face of MoS₂

Abstract

C 60 film has been grown heteroepitaxially on a cleaved face of MoS 2 by means of van der Waals epitaxy. The C 60 film forms a close-packed structure with its principal crystal axes parallel to those of the substrate. Although the lattice constant of the C 60 crystal is much larger than that of MoS 2 , good heteroepitaxial growth becomes possible because of the van der Waals-type interaction between the grown film and the substrate.