Organic thin film transistors with polyvinyl alcohol treated dielectric surface

Abstract

This is a report on a simple method for improving poly-4-vinylphenol (PVP) organic thin-film transistors (OTFTs). To decrease surface roughness so that we could form a larger grain size, we coated a polyvinyl alcohol (PVA) film onto the PVP dielectric layer. The effect of PVA treated gate dielectric surface modification has been examined and these organic transistors showed improved electrical characteristics with field effect mobility of 3.6 × 10−2 cm2 V−1 s−1 and a Ion/Ioff ratio of 2.11 × 105. The results demonstrate the possibility of a simple enhancement method through the process which uses a polymer thin film.