physica status solidi (a) · 1987 · 17 citations · 1 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor MaterialsCrystal ChemistryCrystal GrowthCrystallization ProcessesCrystallographySemiconductor Crystal GrowthSemiconductor DefectsCadmium SelenideCadmium TellurideChlorine ChemistryCrystal Defects During GrowthImpuritiesResidual Process Impurities
Generally, chlorine compensated CdTe crystals elaborated by the THM technique show resistivities in the first grown material in the order of 109 Ω cm. However, this value decreases more or less rapidly down to 106 Ω cm after 10 to 15 cm grown crystal length. The microscopic defects present along the crystal in a large number of ingots, were measured systematically as well as the chemical residual impurities, especially, the added chlorine, in order to try to understand this evolution along the crystal.
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