Abstract

The thickness and structure of the deposited silicon films depends on the duration of the crystallization process, temperature, concentration of silicon vapors and the content of impurities in the system. A detailed study of these growth variables has not been made. However, an empirical approach in setting the operating conditions used in this study, has led to establishing the feasibility of epitaxially growing silicon layers on silicon substrates by the disproportionation of silicon di-iodide.