Solid solubility of selenium in GaAs as measured by secondary ion mass spectrometry

Abstract

Secondary ion mass spectrometry profiles of redistributed selenium ion-implanted GaAs samples have been used to determine the solid solubility limit (Css) for this impurity. The data are well approximated by Css=9.5×1023 exp(−1.23±0.02eV/kT) cm−3. It is also shown that carrier concentrations equivalent to this limit can be obtained for annealing temperatures up to 900 °C.