Experimental evidence of correlation between 1/<i>f</i>noise level and metal-to-insulator transition temperature in epitaxial La_0.7Sr_0.3MnO₃thin films

Abstract

The relation between lattice deformation, dc electrical properties and 1/f noise at room temperature was investigated experimentally in two series of high epitaxial La0.7Sr0.3MnO3 (LSMO) thin films of various thicknesses. The first series was deposited on SrTiO3 (0 0 1) single crystal substrates by pulsed laser deposition and the second one on SrTiO3-buffered Si (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/f noise level and the temperature of the metal-to-insulator transition. These findings are important in view of the optimization of LSMO thin films for applications in sensors.