Effects of electron-beam-induced damage on leakage currents in back-gated GaAs/AlGaAs devices

Abstract

The effect of electron-beam-induced damage on the leakage current between a back gate and an ohmic contact in a GaAs/AlGaAs modulation-doped heterostructure grown on a conducting substrate was investigated. Enhanced leakage currents were observed for certain values of the electron-beam energy. The experimental data are shown to be in qualitative agreement with the theory of Gruen, and device implications of this damage, pertaining to back-gating, are discussed.