Semiconductor Science and Technology · 2011 · 14 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesLuminescent MaterialsOptical Properties Of SemiconductorsQuantum ConfinementQuantum WellsInfrared Light-emitting DiodesLight-emitting DevicesQuantum Well HeterostructuresQuantum Well Light-emitting DiodesQuantum Well StructuresSemiconductor Light-emitting MaterialsType-i Quantum WellsWet Etching
GaSb-based type I InGaAsSb quantum well mid-infrared (mid-IR) light-emitting diodes (LEDs) operated at wavelengths up to 3.66 µm are demonstrated. The application of quinternary AlGaInAsSb barriers improved hole confinement in the quantum wells and enabled an LED radiant excitance of 1.3 W cm−2 (λ = 3.66 µm) at 100 K which corresponds to the emittance of a blackbody at 1350 K. High-contrast individually addressed 512 × 512 LED arrays were designed and fabricated using wet etching. An accurate characterization technique for mid-IR LEDs has been developed.
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Physics of Semiconductor Laser Devices
J.E. Carroll · IEE Proceedings I Solid State and Electron Devices · 1981 · 289 citations
Continuous wave operation of diode lasers at 3.36μm at 12°C
L. Shterengas, Gregory Belenky, Takashi Hosoda et al. · Applied Physics Letters · 2008 · 92 citations