Applied Physics Letters · 1998 · 61 citations · 16 references
EngineeringElectromigration-induced FailureInterconnect (Integrated Circuits)Theoretical AnalysisApplied Electric FieldElectronic PackagingTransgranular Void PropagationThin Film ProcessingMaterials ScienceMaterials EngineeringElectrical EngineeringElectromigration TechniqueMetallic Thin FilmsPhysicsTime-dependent Dielectric BreakdownSolid MechanicsDefect FormationMicroelectronicsSurface ScienceApplied PhysicsCondensed Matter PhysicsThin FilmsElectrical InsulationInterface Phenomenon
A theoretical analysis is presented of the failure of metallic thin films due to electromigration-induced morphological evolution of transgranular voids. Self-consistent dynamical simulations emphasize the important roles of the anisotropy of void surface diffusivity, the strength of the applied electric field, and the void size. Our simulations predict formation of stable faceted voids, formation of wedge-shaped voids through a facet selection mechanism, as well as failure due to propagation of slitlike features from void surfaces, in excellent agreement with recent experimental observations.
16
P Shing Ho, T Kwok · Reports on Progress in Physics · 1989 · 810 citations
Engineering, Interconnect (Integrated Circuits), Electrometallurgy +16
Lin Xia, A. F. Bower, Zhigang Suo et al. · Journal of the Mechanics and Physics of Solids · 1997 · 127 citations
Materials Science, Finite Element Method, Electromigration Technique +12